Feature 1. High temperature tolerance 2. Corrosion resistance 3. High bending strength 4. Oxidation resistance.
Silicon Carbide LIne currently serves the following market segments
SanitarywareTablewareElectrical PorcelinTechnical CeramicsRefractory Ceramics | Petro-ChemicalPower GenerationIndustrial Process HeatingMineral ProcessingArtware & Pottery |
Silicon Carbide Line is currently available for the following principal application
Low MassBeam/PostsRollersPlate SettersSaggersBurner NozzlesWaste Heat Boiler FerrulesFluid Bed Components | Pump ComponentsMechanical SealsCruciblesSand Blast NozzlesThrust ComponentsFire Tube Boiler FerrulesDust Collector Components |
Reaction bonded SiC is made by infiltrating compacts made of mixtures of SiC and Carbon with liquid Silicon. The Silicon reacts with the Carbon forming more SiC which bonds the initial SiC particles.
Sintered SiC is produced from pure SiC powder with non-oxide sintering aids. Conventional ceramic forming processes are used and the material is sintered in an inert atmosphere at temperatures up to 2000ºC or higher.
Both forms of Silicon Carbide (SiC) are highly wear resistant with good mechanical properties, including high temperature strength and thermal shock resistance.
Typical Silicon Carbide characteristics include:
§ Low density § High strength § Good high temperature strength (Reaction bonded) § Oxidation resistance (Reaction bonded) § Excellent thermal shock resistance § High hardness and wear resistance § Excellent chemical resistance § Low thermal expansion and high thermal conductivityTypical Silicon Carbide applications include:
§ Fixed and moving turbine components § Seals, bearings, pump vanes § Ball valve parts § Wear plates § Kiln furniture § Heat exchangers § Semiconductor wafer processing equipment Technical Ceramics Coatings Braze Alloys Glass ProductsTechnical Parameter of Reaction Bonded Silicon Carbide | |
item | data |
temperature of application | 1380°C |
density | >=3.02g/cm3 |
open porosity | <0.1% |
bending strength | 250Mpa(20centigrade), 280Mpa(1200centigrade) |
modulus of elasticity | 330Gpa(20centigrade), 300Gpa(1200centigrade) |
thermal conductivity | 45W/m.k(1200centigrade) |
coefficient of thermal expansion | 4.5K-1*10-6 |
Mohs hardness | 13 |
Acid and alkali resistance | Excellent |
Technical Parameter of recrystallized silicon carbide Silicon Carbide | |
Item | Data |
Temperature of application | 1620oC |
Density | ≥2.65g/cm3 |
Open porosity | 15% |
Bending strength | 90Mpa(20 celsius degrees), 110Mpa(1200celsius degrees) |
Thermal conductivity | 36.6W/m.k(1200celsius degrees) |
Coefficient of thermal expansion | 4.5 K-1*10-6 |
Acid and alkali resistance | Excellent |
Contact:
Weifang Beihai Fine Ceramics welcome you to visit our factory!
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