Detailed Product Description

Features:
1) All-diffused structure
2) Amplifying gate configuration
3) VTM<2.2V at 25°C, 5000A
4) High DV/DT capability; blocking capability up to 3000V
5) For phase control applications

Specifications at 125°C:
1) VTM≤2.2V@ITM=5000A
2) DI/DT = 150A/us
3) VRRM/VDRM : 800-3000V