Detailed Product Description

Features: 1) All-diffused structure 2) Interdigitated amplifying gate configuration 3) VTM<1.45V at 25°C, 2,000A 4) High DV/DT capability; blocking capability up to 2000V 5) For inverter and chopper applications Specifications at 125°C: 1) Tq = 100us 2) VTM≤1.45V at 25°C, 2,000A 3) VRRM/VDRM : 1200-2000V