Detailed Product Description

Features: 1) All-diffused structure 2) Amplifying gate configuration 3) VTM<2.25V at 25°C, 2,000A 4) High DV/DT capability; blocking capability up to 1600V 5) Pressure assembled device 6) For phase control applications Specifications at 125°C: 1) VTM≤2.25V@ITM=3000A 2) DI/DT = 150A/us 3) VRRM/VDRM : 800-1600V