1.Low on-state voltage drop; 2.High di/dt,dv/dt capability,good dynamic features; 3.Diameter range:25mm-100mm
TECHNICAL FEATURES:
Low VTM,high ITSM,,strong capability for keeping out current rush.With high di/dt,high dv/dt capability,good dynamic feature.Evaporation of thick Al layer ensures devices working steadily for a long time.25mm-55mm diameter chips most suitable to make the thyristor power modules.Establish perfect inspection and testing center.
MAIN PROCESS FLOW:
Diffusion—Mask Alignment—Single Side Etching—Al Evaporation—Sintering—Beveling—Passivation—E-irradiation--Testing
ThyristorsChips
Chip dia.±0.1 | Gate dia. | Cathode internal dia. | Cathode external dia. | VDRM VRRM
| TJM |
mm | mm | mm | mm | V | °C |
25.4 | 2.7 | 5.2 | 20.5 | 100-6500 | 125 |
30 | 2.7 | 5.2 | 25 | 100-6500 | 125 |
30.48 | 2.7 | 5.2 | 25 | 100-6500 | 125 |
35 | 3.4 | 6.2 | 29 | 100-6500 | 125 |
38.1 | 3.4 | 6.2 | 31.5 | 100-6500 | 125 |
40 | 3.4 | 6.2 | 31.5 | 100-6500 | 125 |
50.8 | 3.4 | 8.8 | 43.8 | 100-6500 | 125 |
55 | 3.4 | 8.8 | 47 | 100-6500 | 125 |
60 | 3.4 | 10 | 52 | 100-6500 | 125 |
63.5 | 6.2 | 10 | 55 | 100-6500 | 125 |
70 | 6.2 | 10 | 62 | 100-6500 | 125 |
76 | 6.2 | 10 | 67 | 100-6500 | 125 |
85 | 6.2 | 10 | 76 | 100-6500 | 125 |
99 | 6.2 | 11 | 88 | 400-5000 | 125 |
CHIP
